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                 ? 2006 IXYS All rights reserved 1 - 2 DSEP 6-06AS 0611 IXYS reserves the right to change limits, test conditions and dimensions. HiPerFREDTM Epitaxial Diode with soft recovery Features Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Applications Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling Dimensions see pages D4 - 85-86 IFAVM VRRM = 600 V trr = 20 ns =6 A TO-252AA (DPAK) Cathode Anode Cathode (Flange) VRSM V V on product VRRM Type Marking 600 600 DSEP 6-06AS 6P060AS C A Symbol Conditions Maximum Ratings IFRMS IFAVM ① IFRM TVJ = T VJM TC = 152°C; rectangular, d = 0.5 6 A tP < 10 μs; rep. rating, pulse width limited by T VJM 12 A 26 A IFSM A TVJ = 45°C; t = 10 ms (50 Hz), sine 40 EAS TVJ = 25°C; non-repetitive 0.1 mJ IAS = 0.8 A; L = 180 μH IAR VA = 1.5 ·VR typ.; f = 10 kHz; repetitive 0.1 A TVJ TVJM Tstg -40...+175 °C 175 °C -40...+150 °C Ptot TC = 25°C 55 W Weight typ. 0.3 g ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 V RRM, duty cycle d = 0.5 Data according to IEC 60747 Symbol Conditions Characteristic Values typ. max. IR TVJ = 25°C V R = VRRM TVJ = 150°C V R = VRRM 50 μA 0.2 mA VF IF = 6 A; T VJ = 150°C 1.33 V TVJ = 25°C 2.02 V RthJC 2.8 K/W trr IF = 1 A; -di/dt = 200 A/μs; V R = 30 V; T VJ = 25°C 20 tbd ns IRM VR = 100 V; I F = 10 A; -di F/dt = 100 A/μs 3.5 4.4 A TVJ = 100°C |